Defect engineering in trivalent ion doped ceria through vanadium assisted charge compensation: insight using photoluminescence, positron annihilation and electron spin resonance spectroscopy-Reference-Cited by-同舟云学术

Defect engineering in trivalent ion doped ceria through vanadium assisted charge compensation: insight using photoluminescence, positron annihilation and electron spin resonance spectroscopy

Published:2021 Issue:46 Volume:50 Page:17378-17389
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Das Debarati¹,Gupta Santosh K.¹²^ORCID,Mohapatra M.¹²,Sudarshan K.¹²^ORCID

Affiliation:

1. Radiochemistry Division, Bhabha Atomic Research Centre, Mumbai-400085, India

2. Homi Bhabha National Institute, Anushaktinagar, Mumbai – 400094, India

Abstract

This work highlighted the strategy to demonstrate the appearance↔disappearance of VO in ceria by choice of the dopant and co-dopant and their relevance in need based defect related applications.

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/DT/D1DT03111B

Reference57 articles.

1. Defect Engineering: A Path toward Exceeding Perfection

2. Defect Engineering in Semiconductors: Manipulating Nonstoichiometric Defects and Understanding Their Impact in Oxynitrides for Solar Energy Conversion

3. Multiphoton light emission in barium stannate perovskites driven by oxygen vacancies, Eu3+ and La3+: accessing the role of defects and local structures

4. Light Harvesting from Oxygen Vacancies and A- and B-Site Dopants in CaSnO3 Perovskite through Efficient Photon Utilization and Local Site Engineering

5. Defect engineering: A versatile tool for tuning the activation of key molecules in photocatalytic reactions

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