Advancements in memory technologies for artificial synapses-Reference-Cited by-同舟云学术

Advancements in memory technologies for artificial synapses

Published:2024 Issue:15 Volume:12 Page:5274-5298
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Sehgal Anubha¹^ORCID,Dhull Seema¹^ORCID,Roy Sourajeet¹,Kaushik Brajesh Kumar¹^ORCID

Affiliation:

1. Indian Institute of Technology Roorkee, Roorkee, Uttarakhand 247667, India

Abstract

This article reviews different synaptic devices and discusses the challenges associated with implementing these devices in hardware, along with corresponding solutions, applications, and prospecting future research directions.

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC04131J

Reference99 articles.

1. Efficient Processing of Deep Neural Networks: A Tutorial and Survey

2. Surface Modification of a Titanium Carbide MXene Memristor to Enhance Memory Window and Low‐Power Operation

3. Flexible Memristive Organic Solar Cell Using Multilayer 2D Titanium Carbide MXene Electrodes

4. J.Sharda , R.Sharma and D.Bhowmik , A crossbar array of analog-digital-hybrid volatile memory synapse cells for energy-efficient on-chip learning , IEEE International Symposium on Circuits and Systems (ISCAS) , Daegu, Korea , 2021 , p. 1

5. Analysis and mitigation of parasitic resistance effects for analog in-memory neural network acceleration

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Energy-efficient synthetic antiferromagnetic skyrmion-based artificial neuronal device;Nanotechnology;2024-08-12