Dislocation strain as the mechanism of phonon scattering at grain boundaries-Reference-Cited by-同舟云学术

Dislocation strain as the mechanism of phonon scattering at grain boundaries

Published:2016 Issue:3 Volume:3 Page:234-240
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Kim Hyun-Sik¹²³⁴⁵^ORCID,Kang Stephen D.¹²³⁴⁵,Tang Yinglu¹²³⁴⁵,Hanus Riley¹²³⁴,Jeffrey Snyder G.¹²³⁴⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. Northwestern University

3. Evanston

4. USA

5. Department of Applied Physics and Materials Science

Abstract

Thermal conductivities of polycrystalline thermoelectric materials are satisfactorily calculated by replacing the commonly used Casimir model (freqeuncy-independent) with grain boundary dislocation strain model (frequency-dependent) of Klemens. It is demonstrated that the grain boundaries are better described as a collection of dislocations rather than perfectly scattering interfaces.

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2016/MH/C5MH00299K

Reference47 articles.

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5. R. Berman , Thermal conduction in solids, Clarendon Press, 1976

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