Boosted interfacial charge transfer in SnO2/SnSe2 heterostructures: toward ultrasensitive room-temperature H2S detection-Reference-Cited by-同舟云学术

Boosted interfacial charge transfer in SnO2/SnSe2 heterostructures: toward ultrasensitive room-temperature H2S detection

Published:2021 Issue:8 Volume:8 Page:2068-2077
ISSN:2052-1553
Container-title:Inorganic Chemistry Frontiers
language:en
Short-container-title:Inorg. Chem. Front.

Author:

Wang Tingting¹²³⁴,Wang You¹²³⁴⁵,Sun Quan⁵²³⁴,Zheng Shengliang⁵²³⁴,Liu Lizhao⁶⁷⁸⁹⁴,Li Jialu¹⁰¹¹¹²⁴,Hao Juanyuan⁵²³⁴^ORCID

Affiliation:

1. School of Chemistry and Chemical Engineering

2. Harbin Institute of Technology

3. Harbin 150001

4. China

5. School of Materials Science and Engineering

6. Key Laboratory of Materials Modification by Laser

7. Ion and Electron Beams (Dalian University of Technology)

8. Ministry of Education

9. Dalian 116024

10. College of Chemistry

11. Jilin University

12. Changchun 130012

Abstract

Novel Sn atom cosharing SnO₂/SnSe₂ heterostructures with a high-quality interface were synthesized via in situ thermal oxidation of SnSe. The boosted interfacial charge transfer endows the material with excellent H₂S sensing performance.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Key Research and Development Program of Heilongjiang

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/QI/D0QI01326A

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