Effect of the pulling, crystal and crucible rotation rate on the thermal stress and the melt–crystal interface in the Czochralski growth of germanium crystals-Reference-Cited by-同舟云学术

Effect of the pulling, crystal and crucible rotation rate on the thermal stress and the melt–crystal interface in the Czochralski growth of germanium crystals

Published:2021 Issue:39 Volume:23 Page:6967-6976
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Saadatirad Mahboobeh¹,Tavakoli Mohammad Hossein²^ORCID,Khodamoradi Hossein¹^ORCID,Masharian Seyedeh Razieh¹

Affiliation:

1. Physics Department, Hamedan Branch, Islamic Azad University, Hamedan, I.R. Iran

2. Physics Department, Bu-Ali Sina University, Hamedan 65174, I.R. Iran

Abstract

The effect of the pulling rate on the melt–crystal interface shape and melt streamline is investigated.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D1CE00455G

Reference29 articles.

1. Crucible-free pulling of germanium crystals

2. Germanium: From the first application of Czochralski crystal growth to large diameter dislocation-free wafers

3. Characterization of high-purity germanium (Ge) crystals for developing novel Ge detectors

4. Computational analysis of heat transfer, thermal stress and dislocation density during resistively Czochralski growth of germanium single crystal

5. Technology development of high purity germanium crystals for radiation detectors

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