UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes-Reference-Cited by-同舟云学术

UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes

Published:2021 Issue:62 Volume:11 Page:38949-38955
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Chen Shanshan¹²³^ORCID,Zhan Tengrun¹,Pan Xinhua³⁴⁵^ORCID,He Haiping³⁴^ORCID,Huang Jingyun³⁴^ORCID,Lu Bin³⁴,Ye Zhizhen³⁴⁵

Affiliation:

1. School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, People's Republic of China

2. Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangzhou 510006, People's Republic of China

3. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China

4. School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, People's Republic of China

5. Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China

Abstract

ZnO/ZnMgO MQWs was employed as an active layer to fabricate p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It showed sharp and efficient UV emission around 370 nm due to constraint of carriers in high-quality MQWs well layer.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/RA/D1RA06685D

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