An enhanced ultrasensitive solar-blind UV photodetector based on an asymmetric Schottky junction designed with graphene/β-Ga<sub>2</sub>O<sub>3</sub>/Ag-Reference-Cited by-同舟云学术

An enhanced ultrasensitive solar-blind UV photodetector based on an asymmetric Schottky junction designed with graphene/β-Ga₂O₃/Ag

Published:2023 Issue:25 Volume:11 Page:8454-8461
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Qi Song¹^ORCID,Liu Jiahang¹,Yue Jianying¹,Ji Xueqiang¹^ORCID,Shen Jiaying¹,Yang Yongtao¹,Wang Jinjin¹^ORCID,Li Shan²,Wu Zhenping¹^ORCID,Tang Weihua²

Affiliation:

1. State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China

2. Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

Abstract

The device has a dark current of 12.09 pA and achieves an outstanding responsivity of 44.09 A W−1, a high detectivity of 5.84 × 1012 Jones.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

State Key Laboratory of Information Photonics and Optical Communications

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC01456H