A nanopillar-modified high-sensitivity asymmetric graphene–GaN photodetector-Reference-Cited by-同舟云学术

A nanopillar-modified high-sensitivity asymmetric graphene–GaN photodetector

Published:2021 Issue:41 Volume:13 Page:17512-17520
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Liu Chang¹,Li Xiaodong²,Hu Tiangui¹,Zhu Wenkai¹,Yan Faguang¹,Wu Tiesheng³,Wang Kaiyou¹^ORCID,Zhao Lixia¹²⁴^ORCID

Affiliation:

1. State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

2. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

3. Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guangxi, China

4. School of Electrical and Electronic Engineering, Tiangong University, 399 Binshuixi Road, Tianjin 300387, P. R. China

Abstract

Integration of two-dimensional (2D) materials with three-dimensional (3D) semiconductors leads to intriguing optical and electrical properties that surpass those of the original materials.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR04102A

Reference42 articles.

1. A Real-Time Wearable UV-Radiation Monitor based on a High-Performance p-CuZnS/n-TiO2 Photodetector

2. Ultrasensitive, Superhigh Signal-to-Noise Ratio, Self-Powered Solar-Blind Photodetector Based on n-Ga2O3/p-CuSCN Core–Shell Microwire Heterojunction

3. Nanoarchitechtonics of Visible-Blind Ultraviolet Photodetector Materials: Critical Features and Nano-Microfabrication

4. Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge-Carrier Engineering

5. Light Modulation and Water Splitting Enhancement Using a Composite Porous GaN Structure

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrode materials and structures in UV photodetectors;Applied Physics Reviews;2024-07-16

2. High Performance Self-Powered Photodetectors Based on Graphene Nanoribbons/Al₂O₃/InGaZnO Heterojunctions;IEEE Photonics Journal;2024-06

3. Plasmonic-enabled nanostructures for designing the next generation of silicon photodetectors: Trends, engineering and opportunities;Surfaces and Interfaces;2024-05

4. Plasmon-enhanced self-powered GaN/ZnTe core/shell nanopillar array photodetector;Nano Research;2024-03-02

5. BaTiO₃/p-GaN/Au self-driven UV photodetector with bipolar photocurrent controlled by ferroelectric polarization;Chinese Physics B;2024-03-01