Combining negative photoconductivity and resistive switching towards in-memory logic operations-Reference-Cited by-同舟云学术

Combining negative photoconductivity and resistive switching towards in-memory logic operations

Published:2023 Issue:10 Volume:15 Page:5001-5010
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Paramanik Subham¹,Pal Amlan J.¹²^ORCID

Affiliation:

1. School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India

2. UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India

Abstract

We demonstrate that a material exhibiting a negative photoconductivity and resistive switching can manifest in-memory OR logic gate operations. We have considered devices based on silver-bismuth-iodide rudorffites for this function.

Funder

Science and Engineering Research Board

Asian Office of Aerospace Research and Development

Council of Scientific and Industrial Research, India

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR00278K

Reference45 articles.

1. Trion-Induced Negative Photoconductivity in MonolayerMoS2

2. Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire

3. Negative Photoconductivity: Bizarre Physics in Semiconductors

4. Negative photoconductivity induced by surface plasmon polaritons in Ag nanowire macrobundles

5. Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors

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