Reaction controlled growth with formic acid for high-quality Cs3Cu2I5 single crystals

Author:

Lai Jianming12,Pan Qiutao1,Wang Wenzhen12ORCID,Wang Shaohan3,Lai Ziyi1,Feng Xiaoxi1,Sun Jing1,Qi Huanzhen1,Hong Feng4ORCID,Zhang Zifa4,Xu Fei4,Chen Junfeng3,Zhu Yan5,Qin Juan1,Zhang Hui1,Xu Run12ORCID,Wang Linjun12

Affiliation:

1. School of Materials Science and Engineering, Shanghai University, 333 Nanchen Road, Shanghai 200444, China

2. Zhejiang Institute of Advanced Materials, SHU, 2189 Jiashan Street, Jiashan 314113, China

3. Key Laboratory of Transparent Opto-functional Inorganic Materials, Chinese Academy of Sciences, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China

4. SHU-Solar E R&D Lab, Department of Physics, College of Sciences, Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, 99 Shangda Road, Shanghai 200444, China

5. Shanghai Technical Institute of Electronics & Information, Shanghai 201411, China

Abstract

Using formic acid controls I ion concentration and growth rate, producing high-quality Cs3Cu2I5 single crystals.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

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