A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing-Reference-Cited by-同舟云学术

A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing

Published:2020 Issue:4 Volume:2 Page:1733-1740
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Su Bao-Wang¹²³⁴⁵,Yao Bin-Wei⁶⁷⁸⁹¹⁰,Zhang Xi-Lin¹²³⁴⁵,Huang Kai-Xuan¹²³⁴⁵,Li De-Kang¹²³⁴⁵,Guo Hao-Wei¹²³⁴⁵,Li Xiao-Kuan¹²³⁴⁵,Chen Xu-Dong⁶⁷⁸⁹¹⁰,Liu Zhi-Bo¹²³⁴⁵^ORCID,Tian Jian-Guo¹²³⁴⁵

Affiliation:

1. The Key Laboratory of Weak Light Nonlinear Photonics

2. Ministry of Education

3. Teda Applied Physics Institute and School of Physics

4. Nankai University

5. Tianjin 300071

6. Institute for New Energy Materials and Low Carbon Technologies

7. School of Materials Science and Engineering

8. Tianjin University of Technology

9. Tianjin 30071

10. China

Abstract

A bipolar junction transistor with good amplification output and gate tunable photocurrent gain has been conveniently fabricated by femtosecond laser processing.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Natural Science Foundation of Tianjin City

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NA/D0NA00201A

Reference50 articles.

1. The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors