Induced UV photon sensing properties in narrow bandgap CdTe quantum dots through controlling hot electron dynamics-Reference-Cited by-同舟云学术

Induced UV photon sensing properties in narrow bandgap CdTe quantum dots through controlling hot electron dynamics

Published:2023 Issue:37 Volume:25 Page:25331-25343
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Thrupthika Thankappan¹^ORCID,Nataraj Devaraj¹²^ORCID,Ramya Subramaniam¹^ORCID,Sangeetha Arumugam¹^ORCID,Thangadurai T. Daniel³

Affiliation:

1. Quantum Materials & Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu 641 046, India

2. UGC-CPEPA Centre for Advanced Studies in Physics for the Development of Solar Energy Materials and Devices, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu, 641 046, India

3. KPR Institute of Engineering and Technology, Coimbatore, Tamil Nadu, 641 407, India

Abstract

A signature feature demonstrating the relaxation of hot electrons in CdTe QDs. A UV photon sensor device structure from CdTe QDs.

Funder

Department of Science and Technology, Ministry of Science and Technology, India

University Grants Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP02424E

Reference74 articles.

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5. Spectroscopic and Device Aspects of Nanocrystal Quantum Dots