BiVO4 based high k microwave dielectric materials: a review-Reference-Cited by-同舟云学术

BiVO4 based high k microwave dielectric materials: a review

Published:2018 Issue:35 Volume:6 Page:9290-9313
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhou Di¹²³⁴⁵^ORCID,Pang Li-Xia¹²⁶⁷⁵,Wang Da-Wei¹²,Reaney Ian M.¹²

Affiliation:

1. Department of Materials Science and Engineering, University of Sheffield

2. UK

3. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiaotong University

4. Xi'an 710049

5. China

6. Micro-optoelectronic Systems Laboratories, Xi’an Technological University

7. Xi’an 710032

Abstract

We precis recent studies on doped BiVO₄ ceramics in terms of A site, B site and A/B site complex substitutions. Low sintering temperature (<800 °C), high ε_r and near zero temperature coefficient values could be obtained in solid solution and composite ceramics.

Funder

Engineering and Physical Sciences Research Council

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC02260G

Reference177 articles.

1. H. E. Swanson , M. C.Morris , J. H.deGroot and E. H.Evans , NBS Report , 1962, vol. 7592, p. 2

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