A type-II GaSe/GeS heterobilayer with strain enhanced photovoltaic properties and external electric field effects-Reference-Cited by-同舟云学术

A type-II GaSe/GeS heterobilayer with strain enhanced photovoltaic properties and external electric field effects

Author:

Zhou Bin¹²³⁴⁵,Gong Shi-Jing⁶⁴⁵⁷^ORCID,Jiang Kai¹²³⁴⁵,Xu Liping¹²³⁴⁵,Shang Liyan¹²³⁴⁵,Zhang Jinzhong¹²³⁴⁵^ORCID,Hu Zhigao¹²³⁴⁵^ORCID,Chu Junhao¹²³⁴⁵

Affiliation:

1. Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai)

2. Department of Materials

3. School of Physics and Electronic Science

4. East China Normal University

5. Shanghai 200241

6. Key Laboratory of Polar Materials and Devices (MOE)

7. China

Abstract

A GaSe/GeS heterobilayer with a type-II band alignment and electric field modulated data storage.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Science and Technology Commission of Shanghai Municipality

Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

Reference52 articles.

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