Improved polaronic transport under a strong Mott–Hubbard interaction in Cu-substituted NiO

Author:

Park Seong Gon1234,Lee Kyu Hyoung5674,Lee Jae-Hoon1234,Bang Geukchan1234,Kim Junghwan891011ORCID,Park Hee Jung512134,Oh Min Suk1415164,Lee Suyoun171819204ORCID,Kim Young-Hoon2122234,Kim Young-Min2122234ORCID,Hosono Hideo89101124,Bang Joonho2122234,Lee Kimoon1234ORCID

Affiliation:

1. Department of Physics

2. Kunsan National University

3. Gunsan 54150

4. Republic of Korea

5. Department of Materials Science and Engineering

6. Yonsei University

7. Seoul 03722

8. Materials Research Center for Element Strategy

9. Tokyo Institute of Technology

10. Yokohama 226-8503

11. Japan

12. Dankook University

13. Cheonan 31116

14. Display Materials and Components Research Center

15. Korea Electronics Technology Institute (KETI)

16. Seongnam 13509

17. Center for Electronic Materials

18. Post-Silicon Semiconductor Institute

19. Korea Institute of Science and Technology (KIST)

20. Seoul 02792

21. Department of Energy Science

22. Sungkyunkwan University (SKKU)

23. Suwon 16419

24. Materials and Structures Laboratory

Abstract

We report the origin of improved hole conduction without band-gap collapse in Cu-doped NiO.

Funder

National Research Foundation of Korea

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

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