Surface engineering of two-dimensional hexagonal boron-nitride for optoelectronic devices-Reference-Cited by-同舟云学术

Surface engineering of two-dimensional hexagonal boron-nitride for optoelectronic devices

Published:2023 Issue:38 Volume:15 Page:15810-15830
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Selopal Gurpreet Singh¹²³^ORCID,Abdelkarim Omar³^ORCID,Kaur Jasneet⁴⁵^ORCID,Liu Jiabin³,Jin Lei³^ORCID,Chen Zhangsen³,Navarro-Pardo Fabiola³^ORCID,Manzhos Sergei³,Sun Shuhui³,Yurtsever Aycan³,Zarrin Hadis⁴^ORCID,Wang Zhiming M.¹⁶,Rosei Federico³^ORCID

Affiliation:

1. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China

2. Department of Engineering, Faculty of Agriculture, Dalhousie University, Truro, B2N 5E3, NS, Canada

3. Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, Varennes, J3X 1P7, QC, Canada

4. Department of Chemical Engineering, Faculty of Engineering & Architectural Science, Toronto Metropolitan University, Toronto, M5B 2K3, ON, Canada

5. Department of Physics and Yousef Haj-Ahmad Department of Engineering, Faculty of Mathematics and Science, Brock University, 1812 Sir Isaac Brock Way, St. Catharines L2S 3A1, ON, Canada

6. Institute for Advanced Study, Chengdu University, Chengdu, Sichuan, 610106, P. R. China

Abstract

The photoelectrochemical devices based on TiO2–CNTs/F-h-BN/QDs yield a 46% improvement compared to the control device (TiO2/QDs) due to reduced trap and associated non-radiative carrier recombination.

Funder

Natural Sciences and Engineering Research Council of Canada

Canada Foundation for Innovation

Canada Research Chairs

Dalhousie University

Mitacs

China Scholarship Council

National Key Research and Development Program of China

Higher Education Discipline Innovation Project

Publisher

Royal Society of Chemistry (RSC)

Subject