Gate-controlled spin–valley–layer locking in bilayer transition-metal dichalcogenides-Reference-Cited by-同舟云学术

Gate-controlled spin–valley–layer locking in bilayer transition-metal dichalcogenides

Published:2020 Issue:43 Volume:12 Page:22281-22288
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Khani H.¹²³⁴^ORCID,Piri Pishekloo S.¹²³⁴

Affiliation:

1. Department of Physics

2. Kharazmi University

3. Tehran

4. Iran

Abstract

We study the transport of spin, valley and layer pseudospin through a magnetoelectric barrier in AB-stacked bilayer TMDs and demonstrate an electrically controllable platform for multifunctional and ultra-high-speed logic devices.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR04630B

Reference45 articles.

1. Valley polarization in MoS2 monolayers by optical pumping

2. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

3. Spin and pseudospins in layered transition metal dichalcogenides

4. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

5. Valley-selective optical Stark effect in monolayer WS2

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