Effect of doping Ti on the vacancy trapping mechanism for helium in ZrCo from first principles-Reference-Cited by-同舟云学术

Effect of doping Ti on the vacancy trapping mechanism for helium in ZrCo from first principles

Published:2019 Issue:37 Volume:21 Page:20909-20918
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Wang Qingqing¹²³⁴^ORCID,Kong Xianggang⁵⁶⁷⁴,Yu You⁵⁶⁷⁴,Han Huilei⁸²³⁴,Sang Ge⁹¹⁰⁴,Zhang Guanghui⁹¹⁰⁴,Yi Yougen¹¹¹²¹³¹⁴⁴,Gao Tao¹²³⁴

Affiliation:

1. Institute of Atomic and Molecular Physics

2. Sichuan University

3. Chengdu

4. China

5. College of Optoelectronic Technology

6. Chengdu University of Information Technology

7. Chengdu 610225

8. College of Mathematics

9. Science and Technology on Surface Physics and Chemistry Laboratory

10. Jiangyou 621907

11. Hunan Key Laboratory for Super-Microstructure and Ultrafast Process

12. College of Physics and Electronics

13. Central South University

14. Changsha 410083

Abstract

The interactions of dopants with point defects such as that between vacancies and helium can affect helium evolution and ultimately the macroscopic properties of materials.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP04502C

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2. Large-scale atomistic simulations of low-energy helium implantation into tungsten single crystals

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4. Dislocation climbing mechanism for helium bubble growth in tungsten

5. He–V cluster nucleation and growth in α-Fe grain boundaries

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