Lattice-site engineering in ZnGa2O4:Cr3+ through Li+ doping for dynamic luminescence and advanced optical anti-counterfeiting-Reference-Cited by-同舟云学术

Lattice-site engineering in ZnGa₂O₄:Cr³⁺ through Li⁺ doping for dynamic luminescence and advanced optical anti-counterfeiting

Published:2022 Issue:20 Volume:10 Page:7935-7948
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Xiahou Junqing¹,Zhu Qi¹^ORCID,Zhu Lin²^ORCID,Huang Sai¹,Zhang Tao³,Sun Xudong⁴^ORCID,Li Ji-Guang⁵^ORCID

Affiliation:

1. Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang, Liaoning, 110819, P. R. China

2. College of Sciences, Northeastern University, Shenyang, Liaoning, 110819, P. R. China

3. Shenyang National Laboratory for Materials Science, Northeastern University, 3-11 Wenhua Road, Shenyang, Liaoning, 110819, P. R. China

4. Foshan Graduate School of Northeastern University, Foshan, Guangdong, 528311, P. R. China

5. Research Center for Functional Materials, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan

Abstract

Doping Li+ resulted in oxygen vacancies and green-yellow emission. Changing the excitation wavelength/temperature yielded varied visible/NIR lights and afterglows, which contributed to a dynamic luminescence.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Liaoning Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC00627H

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1. Optical Nanomaterials and Enabling Technologies for High‐Security‐Level Anticounterfeiting

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