Direct growth of etch pit-free GaN crystals on few-layer graphene-Reference-Cited by-同舟云学术

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Direct growth of etch pit-free GaN crystals on few-layer graphene

Published:2015 Issue:2 Volume:5 Page:1343-1349
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Chae Seung Jin¹²³⁴⁵,Kim Yong Hwan¹²³⁴⁵,Seo Tae Hoon⁶⁷⁸⁵,Duong Dinh Loc¹²³⁴⁵,Lee Seung Mi⁹¹⁰¹¹¹²,Park Min Ho¹³³⁴¹²,Kim Eun Sung¹²³⁴⁵,Bae Jung Jun¹²³⁴⁵,Lee Si Young¹²³⁴⁵,Jeong Hyun¹²³⁴⁵,Suh Eun-Kyung⁶⁷⁸⁵,Yang Cheol Woong¹³³⁴¹²,Jeong Mun Seok¹²³⁴⁵,Lee Young Hee¹²³⁴⁵

Affiliation:

1. Center for Integrated Nanostructure Physics

2. Institute for Basic Science

3. Sungkyunkwan University

4. Suwon 440-746

5. Republic of Korea

6. School of Semiconductor and Chemical Engineering

7. Chonbuk National University

8. Jeonju 561-756

9. Center for Nanocharacterization

10. Korea Research Institute of Standards and Science

11. Daejeon 305-340

12. Korea

13. Department of Advanced Materials Engineering

Abstract

We report high-quality GaN crystals grown directly on graphene layers without a buffer layer by metal–organic chemical vapour deposition.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C4RA12557F

Reference39 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Nitride-based semiconductors for blue and green light-emitting devices

3. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

4. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

5. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

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