<i>Ab initio</i> investigation of electronic structure and optical properties of IrSn<sub>4</sub>-Reference-Cited by-同舟云学术

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Ab initio investigation of electronic structure and optical properties of IrSn₄

Published:2022 Issue:28 Volume:12 Page:17882-17888
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Mai Thi Ly¹²^ORCID,Tran Vinh Hung³^ORCID

Affiliation:

1. Simulation in Materials Science Research Group, Science and Technology Advanced Institute, Van Lang University, Ho Chi Minh City, Vietnam

2. Faculty of Technology, Van Lang University, Ho Chi Minh City, Vietnam

3. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, PO. Box 1410, 50-422 Wrocław, Poland

Abstract

The ELF isosurfaces cutting along the 110 planes of β-IrSn4 reveal the high anisotropic distributions of electrons with the itinerant character of Ir-5d and highly localized properties of Sn-5p electrons.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D2RA01672A

Reference35 articles.

1. R.Flükiger , Reviews of Accelerator Science and Technology , 2012 , vol. 05 , pp. 1–23

2. Transition-metal stannides with high tin content: Os4Sn17, RhSn3, RhSn4 and IrSn4

3. Polymorphism of IrSn4

4. The new phases IrSn4 and RhGe4 formed by high pressure treatment

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Linear Magnetoresistance and Type-I Superconductivity in \(\beta\)-IrSn₄;Journal of the Physical Society of Japan;2024-04-15

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