HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition-Reference-Cited by-同舟云学术

HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

Published:2021 Issue:37 Volume:50 Page:13066-13072
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Cao Yuanyuan¹,Zhu Sha¹,Bachmann Julien¹²^ORCID

Affiliation:

1. Chemistry of Thin Film Materials (CTFM), Interdisciplinary Center of Nanostructured Films (IZNF), Friedrich Alexander University of Erlangen-Nuremberg, Cauerstr. 3, 91058 Erlangen, Germany

2. Institute of Chemistry, Saint-Petersburg State University, Universitetskii pr. 26, St. Petersburg 198504, Russia

Abstract

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

Funder

H2020 European Research Council

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/DT/D1DT01232K

Reference40 articles.

1. A type-II GaSe/HfS2 van der Waals heterostructure as promising photocatalyst with high carrier mobility

2. Dynamically reconfigurable electronic and phononic properties in intercalated HfS2

3. Electronic and hyperbolic dielectric properties of ZrS2/HfS2 heterostructures

4. Electronic and optical excitations of two-dimensional ZrS2 and HfS2 and their heterostructure

5. Two-dimensional graphene–HfS2 van der Waals heterostructure as electrode material for alkali-ion batteries

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