Nitrogen-mediated aligned growth of hexagonal BN films for reliable high-performance InSe transistors-Reference-Cited by-同舟云学术

Nitrogen-mediated aligned growth of hexagonal BN films for reliable high-performance InSe transistors

Published:2020 Issue:13 Volume:8 Page:4421-4431
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chng Soon Siang¹²³^ORCID,Zhu Minmin⁴⁵³^ORCID,Wu Jing⁶⁷³,Wang Xizu⁶⁷³^ORCID,Ng Zhi Kai¹²³,Zhang Keke⁴⁵³,Liu Chongyang⁴⁵³,Shakerzadeh Maziar¹²³,Tsang Siuhon⁴⁵³,Teo Edwin Hang Tong¹²³⁴⁵^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering

2. Nanyang Technological University

3. Singapore

4. Temasek Laboratories

5. Research Techno Plaza

6. Institute of Materials Research and Engineering (IMRE)

7. Agency for Science, Technology and Research (A*STAR)

Abstract

Orientation controlled hexagonal boron nitride (h-BN) films exhibit excellent mechanical and thermal properties, making them attractive for diverse applications.

Funder

Agency for Science, Technology and Research

Nanyang Technological University

National Research Foundation Singapore

Agence Nationale de la Recherche

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC06733G

Reference45 articles.