Epitaxial growth of perovskite oxide films facilitated by oxygen vacancies-Reference-Cited by-同舟云学术

Epitaxial growth of perovskite oxide films facilitated by oxygen vacancies

Published:2021 Issue:5 Volume:9 Page:1693-1700
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Tyunina M.¹²³⁴⁵^ORCID,Rusevich L. L.⁶⁷⁸⁹^ORCID,Kotomin E. A.⁶⁷⁸⁹¹⁰^ORCID,Pacherova O.¹¹¹²¹³,Kocourek T.¹¹¹²¹³,Dejneka A.¹¹¹²¹³

Affiliation:

1. Microelectronics Research Unit

2. Faculty of Information Technology and Electrical Engineering

3. University of Oulu

4. FI-90014 Oulu

5. Finland

6. Institute of Solid State Physics

7. University of Latvia

8. LV-1063 Riga

9. Latvia

10. Max Planck Institute for Solid State Research

11. Institute of Physics of the Czech Academy of Sciences

12. 18221 Prague

13. Czech Republic

Abstract

Anisotropic elastic dipoles of oxygen vacancies interact with substrate-induced misfit strain in epitaxial oxide films. This interaction leads to specific spatial alignment of the dipoles that facilitates coherent growth.

Funder

Grantová Agentura České Republiky

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC05750A

Reference45 articles.

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4. Growth mechanism of epitaxial SrTiO3 on a (1 × 2) + (2 × 1) reconstructed Sr(1/2 ML)/Si(001) surface

5. Self-assembled multiferroic perovskite–spinel nanocomposite thin films: epitaxial growth, templating and integration on silicon

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