A vertically layered MoS2/Si heterojunction for an ultrahigh and ultrafast photoresponse photodetector-Reference-Cited by-同舟云学术

A vertically layered MoS2/Si heterojunction for an ultrahigh and ultrafast photoresponse photodetector

Published:2018 Issue:13 Volume:6 Page:3233-3239
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Qiao Shuang¹²³⁴⁵^ORCID,Cong Ridong¹²³⁴⁵,Liu Jihong¹²³⁴⁵,Liang Baolai¹²³⁴⁵,Fu Guangsheng¹²³⁴⁵,Yu Wei¹²³⁴⁵,Ren Kailiang⁶⁷⁸⁹¹⁰,Wang Shufang¹²³⁴⁵,Pan Caofeng⁶⁷⁸⁹¹⁰^ORCID

Affiliation:

1. Hebei Key Laboratory of Optic-Electronic Information and Materials

2. College of Physics Science and Technology

3. Hebei University

4. Baoding 071002

5. P. R. China

6. Beijing Institute of Nanoenergy and Nanosystems

7. Chinese Academy of Sciences

8. Beijing

9. China

10. School of Nanoscience and Technology

Abstract

The CVD prepared V-MoS₂ heterojunction photodetector exhibits excellent photoelectric performances in a wide broadband with high responsivity, large detectivity, and ultrafast response speed.

Funder

Natural Science Foundation of Beijing Municipality

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

Ministry of Science and Technology of the People's Republic of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C7TC05896A

Reference39 articles.