Intrinsic defects in gallium sulfide monolayer: a first-principles study
Author:
Affiliation:
1. State Key Laboratory for Superlattice and Microstructure
2. Institute of Semiconductor
3. Chinese Academy of Science
4. Beijing 100083
5. China
Abstract
The electronic and magnetic properties of native point defects, including vacancies (VGa and VS), antisites (GaS and SGa) and interstitials (Gai and Si) in monolayer and bulk GaS, were systemically studied using the density functional theory method.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA08329J
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