Direct silicon–nitrogen bonded host materials with enhanced σ–π conjugation for blue phosphorescent organic light-emitting diodes-Reference-Cited by-同舟云学术

Direct silicon–nitrogen bonded host materials with enhanced σ–π conjugation for blue phosphorescent organic light-emitting diodes

Published:2016 Issue:42 Volume:4 Page:10047-10052
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Huanhuan¹²³⁴⁵,Xu Lijia¹²³⁴⁵,Tang Yuting¹²³⁴⁵,Tao Ye¹²³⁴⁵,Xu Shen¹²³⁴⁵,Zheng Chao¹²³⁴⁵,Xing Guichuan⁶⁷⁸⁹⁵,Zhou Xinhui¹²³⁴⁵,Huang Wei⁶⁷⁸⁹⁵,Chen Runfeng¹²³⁴⁵

Affiliation:

1. Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials

2. National Synergetic Innovation Center for Advanced Materials

3. Nanjing University of Posts & Telecommunications

4. Nanjing 210023

5. P. R. China

6. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)

7. National Synergetic Innovation Center for Advanced Materials (SICAM)

8. Nanjing Tech University (Nanjing Tech)

9. Nanjing 211816

Abstract

High-performance host materials have been designed in the π–σ–π molecular architecture via N–Si–N bonding with increased d-orbital participation of silicon for enhanced σ–π conjugation and improved optoelectronic properties.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC03877H

Reference46 articles.

1. Organic host materials for phosphorescent organic light-emitting diodes

2. Highly efficient phosphorescent emission from organic electroluminescent devices

3. Highly Efficient Organic Light-Emitting Diodes with Phosphorescent Emitters Having High Quantum Yield and Horizontal Orientation of Transition Dipole Moments