Vacancy induced formation of nanoporous silicon, carbon and silicon carbide-Reference-Cited by-同舟云学术

Vacancy induced formation of nanoporous silicon, carbon and silicon carbide

Published:2019 Issue:12 Volume:21 Page:6517-6524
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Opletal G.¹²³⁴^ORCID,Sun B.¹²³⁴^ORCID,Petersen T. C.⁵⁶⁷⁴,Russo S. P.⁸⁹¹⁰⁴,Barnard A. S.¹²³⁴^ORCID

Affiliation:

1. Data61 CSIRO

2. Door 34 Goods Shed Village St

3. Docklands

4. Australia

5. School of Physics and Astronomy

6. Monash University

7. Clayton

8. Australian Research Council Centre of Excellence in Exciton Science

9. School of Science

10. RMIT University

Abstract

The crystalline structural stability and threshold of amorphisation of carbon, silicon and silicon carbide is investigated via vacancy removal and Monte Carlo annealing simulations.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CP/C8CP06649C

Reference72 articles.

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2. T. Yashiro , K.Saito and T.Suzuki , The Effect of Proton Bombardment on Porous Silicon Formation , in Ion Implantation in Semiconductor , ed. S. Namba , Springer , Boston, MA , 1975

3. Stress and plastic flow in silicon during amorphization by ion bombardment

4. Void formation in Ge induced by high energy heavy ion irradiation

5. A. Halimaoui , Porous silicon formation by anodization , in Properties of Porous Silicon , ed. L. T. Canham , Institution of Engineering and Technology , London , 1975

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