Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure-Reference-Cited by-同舟云学术

Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure

Published:2017 Issue:38 Volume:19 Page:25938-25948
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Chakrabarti Somsubhra¹²³⁴⁵,Maikap Siddheswar¹²³⁴⁵^ORCID,Samanta Subhranu¹²³⁴⁵,Jana Surajit¹²³⁴⁵,Roy Anisha¹²³⁴⁵,Qiu Jian-Tai⁶⁷⁸⁴⁵

Affiliation:

1. Thin Film Nano Tech. Lab.

2. Department of Electronics Engineering

3. Chang Gung University

4. Tao-Yuan

5. Taiwan

6. Division of Gyn-Oncology

7. Department of Obs/Gyn

8. Chang Gung Memorial Hospital (CGMH)

Abstract

The resistive switching characteristics of a scalable IrO_x/Al₂O₃/W cross-point structure and its mechanism for pH/H₂O₂ sensing along with glucose detection have been investigated for the first time.

Funder

Ministry of Science and Technology, Taiwan

Chang Gung Memorial Hospital, Linkou

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C7CP05089E

Reference52 articles.

1. Memristor-The missing circuit element

2. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

3. Sub-nanosecond switching of a tantalum oxide memristor

4. TaO x -based resistive switching memories: prospective and challenges

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonenzymatic Hydrogen Peroxide and Glucose Sensing Using TiO2/CuO Hierarchical Heterojunction Nanostructure;Nano LIFE;2024-08-07

2. Resistive Memory with Functional Duality-Non Volatile Emerging Memory & Nano Biosensors;Memristors - the Fourth Fundamental Circuit Element - Theory, Device, and Applications [Working Title];2023-10-05

3. Comparative analysis of low-frequency noise based resistive switching phenomenon for filamentary and interfacial RRAM devices;Chaos, Solitons & Fractals;2023-08

4. New Insights into Crystal Defects, Oxygen Vacancies, and Phase Transition of Ir-TiO2;The Journal of Physical Chemistry C;2021-10-19

5. Coexistence of volatile and non-volatile resistive switching in Ni/SiO2/Pt memristor device controlled from different current compliances;Semiconductor Science and Technology;2021-08-18