Integrated 4-terminal single-contact nanoelectromechanical relays implemented in a silicon-on-insulator foundry process-Reference-Cited by-同舟云学术

Integrated 4-terminal single-contact nanoelectromechanical relays implemented in a silicon-on-insulator foundry process

Published:2023 Issue:43 Volume:15 Page:17335-17341
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Yingying¹^ORCID,Worsey Elliott²,Bleiker Simon J.¹,Edinger Pierre¹,Kulsreshath Mukesh Kumar²,Tang Qi²,Takabayashi Alain Yuji³,Quack Niels³^ORCID,Verheyen Peter⁴,Bogaerts Wim⁴⁵,Gylfason Kristinn B.¹^ORCID,Pamunuwa Dinesh²,Niklaus Frank¹^ORCID

Affiliation:

1. KTH Royal Institute of Technology, 11428 Stockholm, Sweden

2. University of Bristol, BS8 1UB Bristol, UK

3. École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland

4. IMEC, 3001 Leuven, Belgium

5. Ghent University, 9052 Gent, Belgium

Abstract

Silicon 4-T NEM relays, patterned in front-end-of-line processing and monolithically integrated with back-end-of-line metallic interconnects manufactured in a commercial foundry platform.

Funder

H2020 European Institute of Innovation and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR03429A

Reference31 articles.

1. Demonstration of Integrated Micro-Electro-Mechanical Relay Circuits for VLSI Applications

2. An Extremely Low Contact-Resistance MEMS Relay Using Meshed Drain Structure and Soft Insulating Layer

3. Performance Analysis of Nanoelectromechanical Relay-Based Field-Programmable Gate Arrays

4. Nanoelectromechanical relay without pull-in instability for high-temperature non-volatile memory

5. Research Status and Development Trend of MEMS Switches: A Review

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