Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology-Reference-Cited by-同舟云学术

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Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology

Published:2018 Issue:18 Volume:10 Page:8615-8627
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Sharma Akhil¹²³⁴^ORCID,Verheijen Marcel A.¹²³⁴⁵,Wu Longfei⁶⁷²³⁴,Karwal Saurabh¹²³⁴^ORCID,Vandalon Vincent¹²³⁴,Knoops Harm C. M.¹²³⁴⁸,Sundaram Ravi S.⁸⁹¹⁰,Hofmann Jan P.⁶⁷²³⁴^ORCID,Kessels W. M. M. (Erwin)¹²³⁴^ORCID,Bol Ageeth A.¹²³⁴^ORCID

Affiliation:

1. Department of Applied Physics

2. Eindhoven University of Technology

3. 5600 MB Eindhoven

4. The Netherlands

5. Philips Innovation Services

6. Laboratory of Inorganic Materials Chemistry

7. Department Chemical Engineering and Chemistry

8. Oxford Instruments Plasma Technology

9. Yatton

10. UK

Abstract

A low-temperature plasma enhanced atomic layer deposition process is demonstrated to synthesize high quality 2-D MoS₂ films with tuneable morphology.

Funder

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Stichting voor de Technische Wetenschappen

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR02339E

Reference75 articles.

1. Two-dimensional atomic crystals

2. Graphene-Like Two-Dimensional Materials

3. Metal dichalcogenide nanosheets: preparation, properties and applications

4. Ultrathin Two-Dimensional Nanomaterials

5. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

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5. Comparative Study of Plasma-Enhanced-Atomic-Layer-Deposited Al₂O₃/HfO₂/SiO₂ and HfO₂/Al₂O₃/SiO₂ Trilayers for Ultraviolet Laser Applications;ACS Applied Materials & Interfaces;2024-06-05

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