Excited state spectroscopy and spin splitting in single layer MoS<sub>2</sub> quantum dots-Reference-Cited by-同舟云学术

Excited state spectroscopy and spin splitting in single layer MoS₂ quantum dots

Published:2023 Issue:45 Volume:15 Page:18203-18211
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Kumar P.¹²,Kim H.³,Tripathy S.³,Watanabe K.⁴^ORCID,Taniguchi T.⁴,Novoselov K. S.¹²⁵,Kotekar-Patil D.³^ORCID

Affiliation:

1. Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore

2. Integrative Sciences and Engineering Programme, National University of Singapore, 119077, Singapore

3. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Innovis, 2 Fusionopolis way, Singapore 138634, Singapore

4. Research Center for Functional Materials, National Institute for Materials, Science, Tsukuba, 305-0044, Japan

5. Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore

Abstract

In this work, we demonstrate record low contact resistance at low temperatures. Moreover, we carefully engineer the device to leverage the sample inhomogeneity to demonstrate confinement in the quantum limit.

Funder

Royal Society

Ministry of Education - Singapore

Japan Society for the Promotion of Science

Institute of Materials Research and Engineering

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR03844K

Reference44 articles.

1. Spin and pseudospins in layered transition metal dichalcogenides

2. Spin–orbit qubit in a semiconductor nanowire

3. A CMOS silicon spin qubit

4. Quantum computation with quantum dots

5. Spins in few-electron quantum dots

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