Bandgap engineering of few-layered MoS2 with low concentrations of S vacancies-Reference-Cited by-同舟云学术

Bandgap engineering of few-layered MoS2 with low concentrations of S vacancies

Published:2020 Issue:27 Volume:10 Page:15702-15706
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

He Wen¹²³⁴⁵,Shi Jia⁶⁷⁸⁹¹⁰,Zhao Hongkang¹²³⁴,Wang Hui⁵¹¹⁷⁸⁹^ORCID,Liu Xinfeng⁶⁷⁸⁹¹⁰^ORCID,Shi Xinghua⁵¹¹⁷⁸⁹^ORCID

Affiliation:

1. School of Physics

2. Beijing Institute of Technology

3. Beijing 100081

4. China

5. Laboratory of Theoretical and Computational Nanoscience

6. CAS Key Laboratory of Standardization and Measurement for Nanotechnology

7. CAS Center for Excellence in Nanoscience

8. National Center for Nanoscience and Technology

9. Chinese Academy of Sciences

10. Beijing 100190

11. CAS Key Laboratory for Nanosystem and Hierarchy Fabrication

Abstract

Band-gap engineering of molybdenum disulfide (MoS₂) by introducing vacancies is of particular interest owing to the potential optoelectronic applications.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA01676D

Reference52 articles.

1. Single-Layer MoS2 Phototransistors

2. Strain-engineered artificial atom as a broad-spectrum solar energy funnel

3. Electroluminescence in Single Layer MoS2

4. Single-layer MoS2 as an efficient photocatalyst

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