Stacking fault and unoccupied densities of state dependence of electromagnetic wave absorption in SiC nanowires-Reference-Cited by-同舟云学术

Stacking fault and unoccupied densities of state dependence of electromagnetic wave absorption in SiC nanowires

Published:2015 Issue:17 Volume:3 Page:4416-4423
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhang Hangyu¹²³⁴,Xu Yongjun¹²³⁴,Zhou Jigang⁵⁶⁷,Jiao Jinfu⁸⁹¹⁰⁴,Chen Yujin¹¹¹²¹³³⁴,Wang Huan¹²³⁴,Liu Chenyu¹²³⁴,Jiang Zhaohua¹²³⁴,Wang Zhijiang¹²³⁴

Affiliation:

1. School of Chemical Engineering and Technology

2. Harbin Institute of Technology

3. Harbin 150001

4. China

5. Canadian Light Source Inc.

6. Saskatoon

7. Canada

8. Chuannan Machinery Factory

9. China Aerospace Science and Technology Corporation

10. Luzhou 646605

11. Key Laboratory of In-Fiber Integrated Optics

12. Ministry of Education and College of Science

13. Harbin Engineering University

Abstract

SiC nanowires with a higher carbon unoccupied DOS possess more stacking faults, resulting in extensive energy dissipation under electromagnetic radiation.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC00405E

Reference52 articles.

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5. Defect-Dominated Shape Recovery of Nanocrystals: A New Strategy for Trimetallic Catalysts

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