Role of electron and hole doping in the NdNi1−xVxO3 nanostructure-Reference-Cited by-同舟云学术

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Role of electron and hole doping in the NdNi_1−xV_xO₃ nanostructure

Published:2023 Issue:46 Volume:25 Page:31741-31746
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Basu Raktima¹^ORCID,Kumawat Reshma¹,Sahu Mrinmay¹,Miah Abu Bakkar²^ORCID,Mitra Partha²,Mukherjee Goutam Dev¹

Affiliation:

1. National Centre for High Pressure Studies, Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur Campus, Mohanpur 741246, Nadia, West Bengal, India

2. Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur Campus, Mohanpur 741246, Nadia, West Bengal, India

Abstract

Switching the majority charge carriers and variations in the electronic properties in nanostructured NdNiO3 by hole and electron injection without any structural transition.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP01409F

Reference30 articles.

1. Raman scattering investigation across the magnetic and metal-insulator transition in rare earth nickelateRNiO3(R=Sm, Nd) thin films

2. Physics of Ultrathin Films and Heterostructures of Rare-Earth Nickelates

3. Raman study of metal–insulator transition in NdNiO3 thin films

4. Conductivity noise across temperature-driven transitions of rare-earth nickelate heterostructures

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