Metal to semiconductor switching in the AgTe monolayer via decoration with alkali metal and alkaline earth metal atoms: a first-principles perspective

Author:

Bafekry A.1ORCID,Fadlallah M. M.2ORCID,Faraji M.3ORCID,Khan S. Hasan4ORCID,Jappor H. R.5,Shokri Babak16,Ghergherehchi M.7,Chang Gap Soo8

Affiliation:

1. Department of Physics, Shahid Beheshti University, 19839-63113, Tehran, Iran

2. Department of Physics, Faculty of Science, Benha University, 13518 Benha, Egypt

3. Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, Sogutozu Caddesi No. 43 Sogutozu, 06560, Ankara, Turkey

4. Department of Electrical and Electronic Engineering (EEE), Khulna University of Engineering & Technology (KUET), Khulna-9203, Bangladesh

5. Department of Physics, College of Education for Pure Sciences, University of Babylon, Hilla, Iraq

6. Department of Physics and Laser-Plasma Research Institute, Shahid Beheshti University, Evin, 19839, Tehran, Iran

7. Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419 Suwon, Korea

8. Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, SK S7N5E2, Canada

Abstract

In this work, employing first-principles calculations, we systematically investigate the atomic structure and electronic and optical properties of the AgTe monolayer, as well as the impact of alkali metal (Li, Na, K) and alkaline earth metal (Be, Mg, Ca) atoms decoration.

Funder

Iran National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

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