Full electrical control of multiple resistance states in van der Waals sliding multiferroic tunnel junctions-Reference-Cited by-同舟云学术

Full electrical control of multiple resistance states in van der Waals sliding multiferroic tunnel junctions

Published:2023 Issue:39 Volume:15 Page:16103-16111
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yang Jie¹²^ORCID,Wu Baochun²,Zhou Jun³^ORCID,Lu Jing²⁴⁵⁶^ORCID,Yang Jinbo²⁴⁵⁶,Shen Lei⁷^ORCID

Affiliation:

1. Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, P. R. China

2. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, P. R. China

3. Institute of Materials Research & Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, Singapore 138634, Singapore

4. Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China

5. Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Peking University, Beijing 100871, P. R. China

6. Yangtze Delta Institute of Optoelectronics, Peking University, Nantong 226010, Jiangsu, P. R. China

7. Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore

Abstract

We introduce a concept of full electrical control of four states in a vdW sliding multiferroic tunnel junction with a giant TMR and a sizeable TER. The STT writing current is one order of magnitude smaller than traditional bulk counterparts.

Funder

Ministry of Education - Singapore

National Natural Science Foundation of China

Peking University

National University of Singapore

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR03951J

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