Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction-Reference-Cited by-同舟云学术

Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction

Published:2018 Issue:50 Volume:8 Page:28804-28809
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Sang Dandan¹²³⁴⁵,Wang Qingru¹²³⁴⁵,Wang Qinglin¹²³⁴⁵^ORCID,Zhang Dong¹²³⁴⁵,Hu Haiquan¹²³⁴⁵,Wang Wenjun¹²³⁴⁵,Zhang Bingyuan¹²³⁴⁵,Fan Quli¹²³⁴⁵^ORCID,Li Hongdong⁶⁷⁸⁵^ORCID

Affiliation:

1. School of Physics Science and Information Technology

2. Shandong Key Laboratory of Optical Communication Science and Technology

3. Liaocheng University

4. Liaocheng 252059

5. China

6. State Key Laboratory of Superhard Materials

7. Jilin University

8. Changchun 130012

Abstract

A heterojunction of n-ZnO nanowire/p-diamond was fabricated and exhibits improved electrical transport properties, which offer a promising design for developing optoelectronic nanodevices working at the nano-scale and with severe environments.

Funder

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Jilin University

Liaocheng University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA03546F

Reference40 articles.