High performance complementary WS2 devices with hybrid Gr/Ni contacts-Reference-Cited by-同舟云学术

High performance complementary WS2 devices with hybrid Gr/Ni contacts

Published:2020 Issue:41 Volume:12 Page:21280-21290
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Khan Muhammad Farooq¹²³⁴^ORCID,Ahmed Faisal⁵⁶⁷⁸⁹,Rehman Shania¹²³⁴^ORCID,Akhtar Imtisal⁹¹⁰¹¹¹²,Rehman Malik Abdul¹³¹⁴¹⁵¹²,Shinde Pragati A.¹³¹⁴¹⁵¹²,Khan Karim¹⁶¹⁷¹⁸¹⁹²⁰^ORCID,Kim Deok-kee¹²³⁴^ORCID,Eom Jonghwa²¹²²²⁴^ORCID,Lipsanen Harri⁵⁶⁷⁸,Sun Zhipei⁵⁶⁷⁸²³

Affiliation:

1. Department of Electrical Engineering

2. Sejong University

3. Gwangjin-gu

4. Korea

5. Department of Electronics and Nanoengineering

6. Aalto University

7. FI-00076 Aalto

8. Finland

9. Department of Mechanical Engineering

10. Chung-Ang University

11. Seoul

12. South Korea

13. School of Mechanical Engineering

14. Yonsei University

15. Seoul 03722

16. School of Electrical Engineering & Intelligentization

17. Dongguan University of Technology (DGUT)

18. Dongguan

19. China

20. Institute of Microscale Optoelectronics

21. Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPCIRC)

22. Seoul 05006

23. QTF Centre of Excellence

Abstract

Demonstration of hybrid graphene/Ni contact to WS₂ device, which can control/switch the carrier types from n-type to p-type in WS₂. We also realized asymmetric Ni and graphene/Ni hybrid contacts to multilayer WS₂ devices where we observed the synergistic p–n diode.

Funder

National Research Foundation of Korea

Academy of Finland

Sejong University

European Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR05737A

Reference60 articles.