In situ investigation of mesoporous silicon oxidation kinetics using infrared emittance spectroscopy-Reference-Cited by-同舟云学术

In situ investigation of mesoporous silicon oxidation kinetics using infrared emittance spectroscopy

Published:2016 Issue:27 Volume:18 Page:18201-18208
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Bardet Benjamin¹²³⁴⁵^ORCID,De Sousa Meneses Domingos²⁶⁷⁸⁹^ORCID,Defforge Thomas¹²³⁴⁵,Billoué Jérôme¹²³⁴⁵,Gautier Gaël¹²³⁴⁵

Affiliation:

1. Université François Rabelais de Tours

2. CNRS

3. CEA

4. INSA-CVL

5. GREMAN UMR 7347

6. CEMHTI UPR3079

7. Université d'Orléans

8. F-45071 Orléans

9. France

Abstract

The kinetics of mesoporous silicon oxidation is investigated by means of infrared emittance measurements. The chemical mechanisms are put in perspective with temperature.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP02086K

Reference53 articles.

1. Porosity and Pore Size Distributions of Porous Silicon Layers

2. M. J. Sailor , in Handbook of Porous Silicon, ed. L. Canham, Springer International Publishing, 2014, pp. 1–24

3. Tuning the Response and Stability of Thin Film Mesoporous Silicon Vapor Sensors by Surface Modification

4. Formation and Properties of Porous Silicon and Its Application

5. Porous silicon chemical sensors and biosensors: A review

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