Coupling of strain, stress, and oxygen non-stoichiometry in thin film Pr0.1Ce0.9O2−δ-Reference-Cited by-同舟云学术

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Coupling of strain, stress, and oxygen non-stoichiometry in thin film Pr0.1Ce0.9O2−δ

Published:2016 Issue:36 Volume:8 Page:16499-16510
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Sheth J.,Chen D.,Kim J. J.,Bowman W. J.,Crozier P. A.,Tuller H. L.,Misture S. T.,Zdzieszynski S.,Sheldon B. W.,Bishop S. R.

Funder

Division of Graduate Education

Division of Materials Research

Basic Energy Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2016/NR/C6NR04083G

Reference52 articles.

1. Switching kinetics of lead zirconate titanate submicron thin‐film memories

2. Thin Film Piezoelectrics for MEMS

3. Low-Voltage Organic Transistors and Depletion-Load Inverters With High-K Pyrochlore BZN Gate Dielectric on Polymer Substrate

4. BaTiO3–SrTiO3 multilayer thin film electro-optic waveguide modulator

5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

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3. High-temperature chemical expansion of Pr0.1Ce0.9O2-δ thin films determined by Differential Laser Doppler Vibrometry;Solid State Ionics;2023-04

4. Surface strain and co-doping effect on Sm and Y co-doped BaCeO3 in proton conducting solid oxide fuel cells;Computational Materials Science;2022-02

5. Chemical lattice strain in nonstoichiometric oxides: an overview;Journal of Materials Chemistry A;2022

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