Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices
Author:
Affiliation:
1. Queensland Micro- and Nanotechnology Centre
2. Griffith University
3. Australia
4. School of Engineering
5. School of Materials Science and Engineering
6. University of New South Wales
Abstract
This article reports the first results on the strain-induced pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC02984H
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