Indirect to direct band gap transition through order to disorder transformation of Cs2AgBiBr6via creating antisite defects for optoelectronic and photovoltaic applications-Reference-Cited by-同舟云学术

Indirect to direct band gap transition through order to disorder transformation of Cs₂AgBiBr₆via creating antisite defects for optoelectronic and photovoltaic applications

Published:2022 Issue:24 Volume:12 Page:15461-15469
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Hadi M. A.¹^ORCID,Islam Md. Nurul²,Podder Jiban²^ORCID

Affiliation:

1. Department of Physics, University of Rajshahi, Rajshahi 6205, Bangladesh

2. Department of Physics, Bangladesh University of Engineering and Technology (BUET), Dhaka 1000, Bangladesh

Abstract

The bandgap of Cs2AgBiBr6 is tuned to a direct bandgap by the disordering of Ag+/Bi3+ cations, creating antisite defects. The creation of antisite defects in the sublattice of double perovskites opens a new avenue for the design of photovoltaic and optoelectronic materials.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D1RA06308A

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