Large-size high-quality CdSe-OPO component for far IR laser output prepared by directional crystal growth technique-Reference-Cited by-同舟云学术

Large-size high-quality CdSe-OPO component for far IR laser output prepared by directional crystal growth technique

Published:2023 Issue:26 Volume:25 Page:3741-3745
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Hu Qianqian¹²,Huang Changbao¹³^ORCID,Wei Lei²⁴,Wu Haixin¹³,Ni Youbao¹³,Yu XueZhou¹²,Song Yanan¹²^ORCID

Affiliation:

1. Advanced Laser Technology Laboratory of Anhui Province, Anhui Institute of Optics and Fine Mechanics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China

2. University of Science and Technology of China, Hefei 230026, P. R. China

3. Anhui Provincial Key Laboratory of Photonics Devices and Materials, Hefei 230031, P. R. China

4. Key Laboratory of Solid-State Laser Technology, North China Research Institute of Electro-Optics, Beijing 100015, P. R. China

Abstract

Φ40 × 100 mm3 CdSe crystal was obtained using a capsuled Mo-crucible method combined with a seed directional technique.

Funder

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D3CE00239J

Reference29 articles.

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2. Crystal Growth and Effects of Annealing on Optical and Electrical Properties of Mid-Infrared Single Crystal LiInS2

3. Growth and Characterization of BaGa4S7: A New Crystal for Mid-IR Nonlinear Optics

4. Growth and characterization of large CdSiP2 single crystals

5. Spectroscopic features of nonlinear AgGaSe2 crystals

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