Exploring the optoelectronic properties of SnSe: a new insight-Reference-Cited by-同舟云学术

Exploring the optoelectronic properties of SnSe: a new insight

Author:

Kumar Manoj¹²³^ORCID,Rani Sanju¹²,Vashishtha Pargam¹⁴,Gupta Govind¹⁴^ORCID,Wang Xu³^ORCID,Singh V. N.¹²^ORCID

Affiliation:

1. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, Uttar Pradesh-201002, India

2. Indian Reference Materials (BND) Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi-110012, India

3. School of Engineering, RMIT University, VIC 3000, Australia

4. Sensor Device Metrology Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India

Abstract

Open-air annealing of SnSe led to a stable and enhanced photoconductive device. The structure was grown into a complete solar cell.

Funder

Council of Scientific and Industrial Research, India

University Grants Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

Reference59 articles.

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