Experimental evidence of wide bandgap in triclinic (001)-oriented Sn5O2(PO4)2 thin films on Y2O3 buffered glass substrates

Author:

Fukumoto Michitaka12345ORCID,Yang Chang12346ORCID,Yu Wenlei12347,Patzig Christian894ORCID,Höche Thomas894ORCID,Ruf Thomas10234,Denecke Reinhard10234ORCID,Lorenz Michael1234ORCID,Grundmann Marius1234ORCID

Affiliation:

1. Felix Bloch Institute for Solid State Physics

2. Universität Leipzig

3. Leipzig 04103

4. Germany

5. Department of Chemistry

6. Key Laboratory of Polar Materials and Devices (MOE), and Department of Electronics

7. School of Ophthalmology & Optometry

8. Fraunhofer Institute for Microstructure of Materials and Systems IMWS

9. Halle (Saale) 06120

10. Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie

Abstract

Sn5O2(PO4)2 is a promising p-type transparent semiconducting oxide. The bandgap of the triclinic Sn5O2(PO4)2 film was estimated to be as large as 3.87 eV, which is the first experimental evidence verifying a recent theoretical prediction.

Funder

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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1. On the stress analysis of anisotropic curved panels;International Journal of Engineering Science;2022-03

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