Nanostructure nitride light emitting diodes via the Talbot effect using improved colloidal photolithography-Reference-Cited by-同舟云学术

Nanostructure nitride light emitting diodes via the Talbot effect using improved colloidal photolithography

Published:2017 Issue:21 Volume:9 Page:7021-7026
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Wang Liancheng¹²³⁴⁵^ORCID,Liu Zhiqiang⁵⁶⁷⁸⁴,Li Zhi⁵⁶⁷⁸⁴,Zhang Yiyun⁵⁶⁷⁸⁴,Li Hongjian⁹¹⁰¹¹¹¹¹²,Yi Xiaoyan⁵⁶⁷⁸⁴,Wang Junxi⁵⁶⁷⁸⁴,Wang Guohong⁵⁶⁷⁸⁴,Li Jinmin⁵⁶⁷⁸⁴

Affiliation:

1. College of Mechanical and Electrical Engineering

2. Central South University

3. Changsha

4. China

5. Semiconductor Lighting Technology and Development Center

6. Institute of Semiconductors

7. Chinese Academy of Sciences

8. Beijing 100083

9. Department of Materials Science and Engineering

10. University of California

11. Santa Barbara

12. USA

Abstract

We report here a new approach of Talbot effect based colloidal photolithography for fabricating nanostructure light emitting diodes (LEDs).

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR01586K

Reference25 articles.

1. Gallium Nitride Nanowire Nanodevices

2. Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature

3. Ultraviolet Electroluminescence of Light-Emitting Diodes Based on Single n-ZnO/p-AlGaN Heterojunction Nanowires

4. Single p–n homojunction white light emitting diodes based on high-performance yellow luminescence of large-scale GaN microcubes

5. Wide Bandgap III-Nitride Nanomembranes for Optoelectronic Applications

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