Solution-processed 2-dimensional hole-doped ionic graphene compounds-Reference-Cited by-同舟云学术

Solution-processed 2-dimensional hole-doped ionic graphene compounds

Published:2017 Issue:3 Volume:4 Page:456-463
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Kam Fong-Yu¹²³,Png Rui-Qi⁴²³,Ang Mervin C. Y.¹²³,Kumar Pawan⁴²³,Rubi Km⁴²³,Mahendiran Ramanathan⁴²³,Solomeshch Olga⁵⁶⁷⁸,Tessler Nir⁵⁶⁷⁸,Lim Geok-Kieng⁴²³⁹¹⁰,Chua Lay-Lay¹²³^ORCID,Ho Peter K. H.⁴²³

Affiliation:

1. Department of Chemistry

2. National University of Singapore

3. Singapore

4. Department of Physics

5. Department of Electrical Engineering

6. Technion – Israel Institute of Technology

7. Haifa 32000

8. Israel

9. DSO National Laboratories

10. Science Park I

Abstract

Solution-based direct assembly of centimeter-square sizes of graphene–fluorofullerene multilayers with a tunable work function, up to 5.7 eV, and a remarkable chemical stability is demonstrated.

Funder

Ministry of Education - Singapore

DSO National Laboratories - Singapore

National Research Foundation-Prime Minister's office, Republic of Singapore

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/MH/C7MH00068E

Reference41 articles.

1. Electrical contacts to two-dimensional semiconductors