Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires-Reference-Cited by-同舟云学术

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Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires

Published:2019 Issue:18 Volume:11 Page:9207-9215
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yuan Xiaoming¹²³⁴⁵^ORCID,Li Lin¹²³⁴⁵,Li Ziyuan⁶⁷⁸⁹¹⁰^ORCID,Wang Fan¹¹¹²¹³¹⁴¹⁰^ORCID,Wang Naiyin⁶⁷⁸⁹¹⁰,Fu Lan⁶⁷⁸⁹¹⁰,He Jun¹²³⁴⁵,Tan Hark Hoe⁶⁷⁸⁹¹⁰^ORCID,Jagadish Chennupati⁶⁷⁸⁹¹⁰

Affiliation:

1. School of Physics and Electronics

2. Hunan Key Laboratory for Supermicrostructure and Ultrafast Process

3. Central South University

4. Changsha

5. P. R. China

6. Department of Electronic Materials Engineering

7. Research School of Physics & Engineering

8. The Australian National University

9. Canberra

10. Australia

11. Institute for Biomedical Materials and Devices (IBMD)

12. Faculty of Science

13. University of Technology Sydney

14. Sydney

Abstract

Superior passivation of GaInP shell and the revealed carrier dynamics in WZ polytype GaAs nanowires.

Funder

Australian Research Council

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Innovation-Driven Project of Central South University

Fundamental Research Funds for Central Universities of the Central South University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR01213C

Reference57 articles.

1. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

2. Optically pumped room-temperature GaAs nanowire lasers

3. GaAs/AlGaAs Nanowire Photodetector

4. Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

5. Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices

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