Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition-Reference-Cited by-同舟云学术

Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition

Published:2020 Issue:12 Volume:22 Page:2138-2146
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Shu G.¹²³⁴⁵^ORCID,Ralchenko V. G.¹²³⁴⁵^ORCID,Bolshakov A. P.¹²³⁴⁵^ORCID,Zavedeev E. V.⁵⁶⁷⁸⁹^ORCID,Khomich A. A.⁵⁶⁷⁸⁹^ORCID,Pivovarov P. A.⁵⁶⁷⁸⁹^ORCID,Ashkinazi E. E.⁵⁶⁷⁸⁹,Konov V. I.⁵⁶⁷⁸⁹^ORCID,Dai B.¹²³⁴^ORCID,Han J.¹²³⁴^ORCID,Zhu J.¹²³⁴^ORCID

Affiliation:

1. National Key Laboratory of Science and Technology on Advanced Composites in Special Environments

2. Harbin Institute of Technology

3. Harbin

4. P.R. China

5. Natural Science Center

6. Prokhorov General Physics Institute

7. Russian Academy of Sciences

8. Moscow

9. Russia

Abstract

Homoepitaxial diamond growth may proceed with stops and resumptions to produce thick crystals. We found the resumption procedure to take place in a complex way, via a disturbance of step growth features, followed by the recovery after a certain time.

Funder

Russian Foundation for Basic Research

National Natural Science Foundation of China

National Basic Research Program of China

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CE/C9CE01933B

Reference48 articles.